University of Regensburg
Institute for Experimental and Applied Physics
March 19, 2024
MoS2 excellent 2D semiconductor
\(\Rightarrow\) Quantum Dots (Schock et al. 2023)
Intrinsic superconductivity (SC) in flakes
Also: Thickness dependend SC in WS2 nanotubes (NT) (Qin et al. 2018)
Objective:
\(\rightarrow\) Ions deposit on device and create large capacitance
\(\rightarrow\) Increase of surface carrier density (n ~ 1014cm-2 (Zhang et al. 2012))
\(\Rightarrow\) Metallic transport in the MoS2 channel
\(\Rightarrow\) Transition to superconductivity for 1.5 K < T < 10 K
Device “Cracks” during Cooldown
Device Degradation
Device “Cracks” during Cooldown
\(\rightarrow\) Cr/Au or Ti/Au contacts
Device Degradation
\(\rightarrow\) Dry and very clean transfer
Next Steps:
Konstantin D. Schneider | University of Regensburg